| 摘要: |
| 为提高MoSe2的光电特性，以MoSe2粉末为原料、采用化学气相沉积法(CVD)在Si衬底上沉积Ag掺杂的MoSe2薄膜。测量并对比Ag掺杂前后MoSe2薄膜的表面形貌﹑晶体结构﹑光吸收特性以及MoSe2-Si异质结光电特性。结果表明：Ag掺杂并未改变MoSe2薄膜的晶体结构且掺杂Ag后的MoSe2的薄膜结晶度更好。掺杂后MoSe2的薄膜的电子迁移率增大6倍，电导率有着显著提高，从而使MoSe2的薄膜具有良好的伏安特性和光电响应。另外，还发现该Ag掺杂MoSe2的薄膜对可见光有更强的吸收性。以上结果表明MoSe2薄膜在光电器件领域和航天航空领域具有很大的应用潜力。 |
| 关键词: 硒化钼 银掺杂 化学气相沉积 光吸收 光电特性 |
| 基金项目: |
|
| Preparation and Photoelectric Properties of Silver Doped Molybdenum Selenide (MoSe2) Thin Films |
|
Yu Chenglong Wei Jie Hu Huimin Zhang Qiang Ma Xiying
|
|
School of Mathematics and Physics, Suzhou University of Science and Technology
|
| Abstract: |
| In this paper, in order to improve the optoelectronics characteristics, MoSe2 powder was used as raw material to deposit Ag doped MoSe2 films on Si substrate through the use of chemical vapor deposition method (CVD). The surface morphology, crystal structure, characteristics of light absorption and the optoelectronics characteristics of MoSe2-Si heterojunction were measured and compared before and after doping the MoSe2 films with Ag. The results suggested that the Ag doping did not change the crystal structure of MoSe2 films while the crystallinity of the MoSe2 film became better after it. What’s more, the electron mobility of the MoSe2 films improved about 6 times, along with the conductivity sharply increasing. As a result, the Ag doped MoSe2 film had profound voltage current characteristic and photoelectric response. Moreover, it was found that the Ag doped MoSe2 film had stronger absorbency to visible light. As mentioned above, it can be concluded that MoSe2 films have great potential in the field of photoelectric devices and aerospace. |
| Key words: MoSe2 silver doped chemical vapor deposition optical absorption optoelectronics characteristics |
